收藏本站
Data Sheet
I DD Specifications AND CONDITIONS
(0°C ≤ T A ≤ + 70°C; V DD = +2.5V ± 0.2V, V DDQ = +2.5V ± 0.2V) see Note 1 on Page 9
Rev.1.1
01.04.2010
Parameter
& Test Condition
OPERATING CURRENT *) : One device bank; Active-
Precharge;
Symb.
I DDO
3200-3033
1280
max.
2700-2533
1200
2100-2533
1040
Unit
mA
t RC = t RC (Min); t CK = t CK (Min); DQ, DM and DQS inputs
changing
once per clock cycle; Address and control inputs
changing once every two clock cycles
OPERATING CURRENT : *)
One device bank; Active-Read-Precharge;
I DD1
1880
1520
1280
mA
Burst = 2; t RC = t RC (Min);
t CK = t CK (Min);I OUT = 0mA;
Address and control inputs changing once per clock
cycle
PRECHARGE POWER-DOWN STANDBY CURRENT:
All device banks idle;
I DD2P
160
160
160
mA
Power-down mode;
t CK = t CK (Min); CKE = (LOW)
IDLE STANDBY CURRENT: CS# = HIGH; All device
banks idle;
I DD2F
560
560
560
mA
t CK = t CK (Min); CKE= HIGH; Address and other control
inputs changing once per clock cycle.
V IN = V REF for DQ, DQS, and DM
ACTIVE POWER-DOWN STANDBY CURRENT: One
device bank active; Power-down mode; t CK = t CK
I DD3P
192
192
192
mA
(Min);CKE = LOW
ACTIVE STANDBY CURRENT: CS# = HIGH; CKE =
HIGH; One device bank; Active-Precharge; t RC = t RAS
I DD3N
800
720
640
mA
(Max); t CK = t CK (Min); DQ, DM and DQS inputs
changing twice per clock cycle; Address and other
control inputs changing once per clock cycle
OPERATING CURRENT:
Burst = 2; Reads; Continous burst; One bank active;
I DD4R
4640
2080
1760
mA
Address and control inputs changing once per clock
cycle; t CK = t CK (Min);
I OUT = 0mA
OPERATING CURRENT: Burst = 2; Writes; Continuous
burst; One device bank active; Address and control
I DD4W
2280
2080
1760
mA
inputs changing once per clock cycle; t CK = t CK (Min);
DQ, DM, and DQS inputs changing twice per clock
cycle
AUTO
REFRESH
CURRENT
t RC = t RC (Min)
t RC = 7.8125μs
I DD5
I DD6
4800
40
4480
40
4160
40
mA
mA
SELF REFRESH CURRENT: CKE ≤ 0.2V
I DD7
4320
3760
3120
I DD5
*) Value calculated as one module rank in this operating condition, and all other module ranks in IDD2P (CKE LOW)
mode.
Swissbit Germany AG
Wolfener Stra?e 36
D-12681 Berlin
Fon: +49 (0) 30 93 69 54 - 0
Fax: +49 (0) 30 93 69 54 - 55
www.swissbit.com
email: info@swissbit.com
Page 7
of 12
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SDN03264C1CE1HY-60WR DRAM DDR1 256MB 200-SODIMM
SE120FML,OR CASE 8.7X7.45X3.89 ORANGE W/LOCK
SE1220FML,GM CASE 28.17X22.27X15 GM W/LOCK
SE300FML,OR CASE 10.80X9.85X4.87 ORANGE/LOCK
SE520FML,OR CASE 14.85X12.15X6.85 ORG W/FOAM
SE540F,OR CASE 14.9X12.13X9.58 OR W/FOAM
SE710CC,GM CASE 19.75X15.53X5.413 GM
SE710FPL,OR CASE 19.75X15.53X5.416 ORN FM/LK
相关代理商/技术参数
SDN01G64D1BJ2SA-50R 制造商:SWISSBIT 功能描述:DDR SO-DIMM 1 GB 400/CL3 - Trays 制造商:SWISSBIT NA INC 功能描述:DDR1 1GB SODIMM
SDN01G64D1BJ2SA-50WR 制造商:SWISSBIT 功能描述:DDR SO-DIMM 1 GB 400/CL3 - Trays
SDN03264C1CE1HY-60WR 功能描述:DRAM DDR1 256MB 200-SODIMM RoHS:是 类别:存储卡，模块 >> 存储器 - 模块 系列:- 标准包装:100 系列:- 存储器类型:SDRAM 存储容量:1GB 速度:133MHz 特点:- 封装/外壳:168-DIMM
SDN03264C1CJ1SA-50R 制造商:SWISSBIT 功能描述:DDR SO-DIMM 256 MB 400/CL3 - Trays 制造商:SWISSBIT NA INC 功能描述:DDR1 256MB SODIMM
SDN03264C1CJ1SA-50WR 制造商:SWISSBIT 功能描述:DDR SO-DIMM 256 MB 400/CL3 - Trays
SDN03264O3BK1MT-60R 制造商:Swissbit 功能描述:602360 制造商:SWISSBIT NA INC 功能描述:DDR1 256MB SODIMM
SDN03272S4BK1MT-60R 制造商:Swissbit 功能描述:602591 制造商:SWISSBIT NA INC 功能描述:DDR1 SODIMM
SDN06464D1BE1HY-60WR 功能描述:DRAM DDR1 512MB 200-SODIMM RoHS:是 类别:存储卡，模块 >> 存储器 - 模块 系列:- 标准包装:100 系列:- 存储器类型:SDRAM 存储容量:1GB 速度:133MHz 特点:- 封装/外壳:168-DIMM